2N6052 PBFREE

2N6050 2N6051 2N6052 PNP SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050 series devices are PNP silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. Complementary NPN devices: 2N6057, 2N6058, 2N6059. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hfe fT Cob SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 60 60 CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=Rated VCEO, VEB=1.5V VCE=Rated VCEO, VEB=1.5V, TC=150°C VCE=½Rated VCEO VEB=5.0V IC=100mA, (2N6050) 60 IC=100mA, (2N6051) 80 IC=100mA, (2N6052) 100 IC=6.0A, IB=24mA IC=12A, IB=120mA IC=12A, IB=120mA VCE=3.0V, IC=6.0A VCE=3.0V, IC=6.0A 750 VCE=3.0V, IC=12A 100 VCE=3.0V, IC=5.0A, f=1.0kHz 300 VCE=3.0V, IC=5.0A, f=1.0MHz 4.0 VCB=10V, IE=0, f=100kHz 2N6051 80 80 5.0 12 20 0.2 150 -65 to +200 1.17 MAX 0.5 5.0 1.0 2.0 2.0 3.0 4.0 2.8 18K 500 2N6052 100 100 UNITS V V V A A A W °C °C/W UNITS mA mA mA mA V V V V V V V MHz pF R2 (28-October 2021) 2N6050 2N6051 2N6052 PNP SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 Active-Region Safe Operating Area LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (28-October 2021) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)